Indium compound is an important ingredient mainly used in the production of ITO sputtering target and semiconductor material. Combining the regional characteristic with its own advantage, our institute conducted key technology research targeting the demands from semiconductor and screen production in electronic industry for indium compounds. So far, it has developed the following products:
1. High purity indium trichloride anhydrous
High purity indium trichloride anhydrous is the ingredient of other inorganic and organic indium compounds such as trimethylindium and chloroaluminum phthalocyanine, which are used in producing substrate III-nitride of light-emitting device extended structure and electrode material for solar cells, respectively. Our institute applies sequential replacement and developed indium trichloride anhydrous 4N, 5N and 6N series in low temperature. These products are used in the production of phosphor, III-V group compound semiconductor and ITO transparent batteries.
2. High purity nanoscale indium oxide
With the new calcination preparation technique developed by our institute, we produce sphere nanoscale indium oxide 4N and 5N series with a diameter of 20-30 nm. These materials are used for the protective coating of wide gap n-type semiconductors, fluorescent screens and metal reflectors. They are also ingredients of electro-optical display semiconductor film and ITO sputtering target.
3. ITO powder and sputtering target
With the self-developed technology, our institute has developed the high sinterability indium tin oxide (ITO) powder which is monodispersed, highly-crystallizable and with a diameter of about 20nm as well as a high-density sputtering target products with 99.99 purity, featuring SnO₂ proportions of 3%, 5%, 7% and 10%, made from special sintering defectless target material which has homogeneous structure. This material, which reduces knot on the film and abnormal discharge, can be used on tablet screen and touch screen.
Picture 1: reactor
Picture 2 – indium compounds products